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The Rutherford backscattering spectrometry (RBS) technique was employed for the growth investigation of Ti-rich interface layers in the annealed Cu(Ti) dielectric-layer . Growth behavior observed in RBS was similar to that in TEM. Thus, the RBS technique is indicated to be appropriate method for the growth analysis of the Ti-rich interface layers.
Stability tests were performed on two test coils wound with two kinds of large-scale composite superconductor, respectively. One is a original LHD conductor, which consists of a NbTi/Cu Rutherford cable, a pure aluminum stabilizer, and a copper sheath around the composite. Another is an Al-less test conductor, which is a LHD conductor without the aluminum stabilizer and a half of the copper sheath...
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