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In this work, we investigate the impact of junction dose distribution (LDD/halo) on device characteristic variation and symmetry for ultra-thin body and bulk oxide silicon on insulator (UTBB SOI) nMOSFET. The device performance and hot carrier induced degradations have also been examined. High junction doping profile will enhances the device's driving capability and sub-threshold swing, but makes...
In this work, we investigate the impact of substrate doping concentration on device characteristic variation and sensitivity to substrate bias for ultra-thin body and bulk oxide SOI MOSFET. We found that high substrate dose device suffer from unsymmetrical and variance in device's characteristics. Compared to high dose substrate UTBB-SOI device, low dose substrate device characteristic is less sensitive...
The impact of the Si cap/SiGe layer on the Hf-based high-k /metal gate SiGe channel pMOSFET performance and reliability has been investigated. We proposed an optimized strain SiGe channel with a Si cap layer to overcome the Ge diffusion and confine the channel carriers in the strained SiGe layer without the formation of a significant parasitic channel at the interface. With this optimized Si/SiGe...
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