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CMOS chips are scaled to smaller geometries, the interconnects play an increasing role in the overall chip performance. This paper presents an integrated process for yield enhancement strategy to overcome a so-called "cosmetic defects" in 130- and 90-nm complementary metal-oxide-semiconductor (CMOS) process node.
This paper applies an analysis of current flow to examine the current density destroy the architecture of wafer-level chip scale package (WLCSP). In package views, the CSP is very robust. Not only due to it had passed the JEDEC moisture level 1,1000 cycles of temperature cycling at level G from -40 to 125 degC and thermal shock test at level D from -65 to 150 degC. Derivatives from recent package...
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