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We present our recent researches on novel group IV nano- and micro-structures for potential light sources on Si, including the tensile strained Ge quantum dots (QDs), GeSn thin films and microstructures, and Ge(Sn) nanowires. Tensile-strained Ge QDs were grown by SS-MBE, and photoluminescence was achieved. The GeSn thin films were demonstrated with Sn concentration above the bandgap transition critical...
TSV-Free Interposer (TFI) technology eliminates TSV fabrication and reduces manufacturing and material cost. Co-design modelling methodology is established for TFI technology with considering wafer process, package assembly and package/board level reliability and thermal performance to optimize structure design, wafer process, assembly process and material selection. Experimental results are used...
This paper proposes an electromagnetic induction type MEMS (Micro Electro Mechanical Systems) motor. The developed MEMS motor is combined the MEMS process and the multilayer ceramic technology. The MEMS process forms the silicon miniature components for a structural part. The multilayer ceramic technology fabricates a miniature ceramic magnetic circuit. This technology is possible to realize a miniature...
Complementation silicon controlled rectifiers (CSCRs) with various novel layouts are designed in 0.18 ??m RF CMOS process, including general CSCR, strip CSCR (SCSCR), island-strip CSCR (ISCSCR) and island-block CSCR (IBCSCR). SCSCR has highest FOM; however, the ISCSCR has lowest parasitic capacitance. Appropriate division layout of the CSCRs should be addressed to achieve a balance between active...
Unprecedented ultrahigh-reflectance (R > 0.9995) in a one-dimensional photonic crystal (1D PC) mirror was experimentally demonstrated by using a terahertz time-domain spectroscopy (THz-TDS). The PC mirror was composed of three air gaps and four high-resistivity float zone (FZ) silicon layers, prepared by a high precision chemical mechanical polishing (CMP) machine. The power reflectance of 1D PC...
High-throughput synthesis of the ferroelectric solid solution Pb(Zr1-xTix)O3 (PZT) on single Pt/Ti/SiO2/Si substrates was demonstrated using a modified molecular beam epitaxy (MBE) system. The PZT films exhibited a phase transition from rhombohehdral (R) to tetragonal (T) symmetry as a function of Zr:Ti ratio, across the substrate diagonal. This was consistent with the presence of a morphotropic phase...
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