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We demonstrate passive mode-locking of a Nd:Sc0.2Y0.8SiO5 laser using a semiconductor saturable absorber mirror. The pulse train shows output power of 0.5 W and pulse duration of 3.5 ps at repetition rate of 118 MHz.
Recently, diode-pumped solid-state lasers based on disordered Nd-doped crystals have attracted significant attention. In mode-locked operation they have a potential to generate tunable laser radiation with pulse duration in sub-picosecond time scale as well as to emit muti-wavelength ultrashort pulses which makes them attractive as a source for terahertz generation [1]. Nowadays, the binary and ternary...
The idea of electron acceleration by laser wakefield in plasma has been suggested [1] and proved [2] to give an accelerating gradient up to several orders of magnitude higher than conventional RF based linac. The unique property of laser plasma not only offers the opportunity to build a compact X-ray source [3] but also can be used as an electron diffraction source with high temporal resolution and...
An experimental investigation on the laser performance of an α-oriented Tm,Ho: YAIO3 crystal end-pumped by a wavelength tunable Ti:Sapphire laser is presented in this paper. Single- and dual-wavelength operations of Tm,Ho:YAIO3 lasers have been investigated in detail. Maximum output powers of 890mW at 2119nm, 836mW at 2103nm and 487mW at 2130nm for the α-oriented Tm,Ho:YAIO3 crystal have been obtained,...
Diode-pumped stable CW mode-locked laser in Yb:LuAG crystal was demonstrated. The pulse duration of 7.63 ps was achieved without any negative dispersion elements. With pump of 8 W, output power was 610 mW with repetition rate of 86 MHz.
By merging Yb fiber oscillator and cryogenically cooled DPSS Yb3+,Na+: CaF2 RA we have generated 195-fs 2-mJ pulses at a 1-kHz repetition rate. Amplification substantially beyond 2 mJ is feasible by improving the quality of surface polishing and AR coatings, as well as by optimizing the RA cavity. Spectral shaping of the seed is crucial for amplification of broad spectra and shows potential for attaining...
Using a novel broadband Yb-doped crystal close-loop cooled at -130degC we demonstrate a 2-6-W multi-kilohertz amplifier delivering sub-200-fs pulses with energies up to 2 mJ. This technology is straightforwardly scalable toward a kHz-repetition-rate multi-mJ output.
Absorption, photoluminescence spectra and CW lasing parameters of an Yb3+- and Na+-codoped CaF2 laser crystal are measured in the temperature range from 5 K to 290 K. The crystal appears to be a promising host for broadband multi-mJ kHz CW-pumped regenerative amplification.
Enhanced photoluminescence and 1.28 mum laser emission from nano-engineered silicon originating respectively from phonon k-selection rule breaking and point defect-mediated phononless recombination in an array of emissive structural deformation zones in a SOI wafer are reported.
Result of diode-pumped cw laser action of Yb:GYSO are demonstrated for the first time. The laser wavelength could be tuned from 1030 to 1089 nm, and a slope efficiency of 57% was achieved.
A diode pumped cw laser operation based on 5-at.% doped Yb:GSO crystal was reported. The optical conversion efficiency of 64.5% at 1089 nm was achieved and the tuning range extends to ~65 nm.
We observe that n-GaAs terahertz emitters with as-grown Be-doped low-temperature-grown (LTG)-GaAs layers exhibits greater radiation power than devices with or without undoped LTG-GaAs layers and explain it by the enhanced electric field in the surface depletion layer.
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