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The geometry effect on the flicker noise characteristics and the variations in 0.13μm CMOS transistors were studied. By symmetrically extending the distance between the shallow-trench-isolation (STI) to the gate, both NMOS and PMOS presented obvious improvement on the noise characteristics. As the distance increased from 0.6μm to 10μm, the average noise level reduced by more than one order of magnitude...
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