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This letter reports the engineering of effective work function (EWF) for tantalum carbide (TaC) metal gate on high-k gate dielectrics. The dependence of EWF on Si concentration in HfSiO as well as nitridation techniques is revealed. The EWF was extracted by both terraced oxide and terraced high-k techniques with the bulk and interface charges taken into account. The incorporation of Si in Hf-based...
A full Cu damascene metallization process was successfully developed for simultaneous formation of sub-0.18 /spl mu/m RF CMOS passive components including circular spiral inductor and MIM capacitor. High quality factor inductor with Q=18 at 1.2 nH was achieved by applying highly uniform Cu CMP process on polishing microns of Cu. Less than 2% Rs uniformity and 70 nm dishing on 95% density Cu line were...
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