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Thin-film polycrystalline photovoltaic devices based on Cu(In,Ga)Se 2 have a demonstrated efficiency approaching 19%. The best performance was achieved when the Ga/In+Ga ratio was in the 25-30% range. The short-circuit current density exhibited for the device containing CdS was almost at its expected maximum. The open-circuit voltage was relatively low considering the optical bandgap (Eg)...
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