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A high voltage GaAs heterojunction bipolar transistor (HBT) with an open-base collector breakdown voltage of 106 V and an open-emitter breakdown voltage of 134 V has been demonstrated. A vertical structure with a doped GaAs substrate, a 9.0 μm thick collector doped to 2.0x10 15 cm -3 , and a backside collector contact were used to achieve this breakdown. The same breakdown...
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