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The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use of a long and weak grating, which was made on a thin and uniformly grown quaternary layer has enabled the grating coupling constant kappa to be well controlled. For most of the lasers the measured linewidths are below 10 MHz. A record high sidemode...
A direct-detection 800 nm GaAs monolithically integrated photoreceiver is reported with a photocurrent gain of 200 and a 1 GHz bandwidth capable of driving a 50 ? load with IV peak pulses. The integrated NPN photodiode has over 7GHz bandwidth and requires no modifications to the ion-implanted GaAs MESFET process. The 200GHz gain-bandwidth product and 3200 V/W responsivity are among the highest reported...
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