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Integrated push-push oscillators, achieving high output power at 210, 235 and 287 GHz, were realized in a 0.5 mum emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with a maximum oscillation frequency fmax of 335 GHz and a breakdown voltage (Vbceo) of 4 V. The oscillators are based on a balanced Colpitts topology in which a strong second harmonic signal is generated by combining the...
High-performance and compact distributed amplifiers were realized in a 0.5 mum emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with a current gain cutoff frequency (fT) and a maximum oscillation frequency (fmax) of 337 and 345 GHz, respectively. A gain of 17 dB with flatness within 1.5 dB was obtained from 45 MHz up to 110 GHz, the highest available measurement frequency. The measured...
A multiwavelength laser array has been obtained through growth on patterened InP substrates using chemical beam epitaxy. This technique makes use of interfacet migration of reactant species to obtain compositional and/or thickness variation with position on a set of patterned ridges. Results obtained on
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