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Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructure bipolar transistors are demonstrated using metalorganic chemical vapour deposition. The transistors have a cutoff frequency of 80 GHz and a common-emitter breakdown voltage of 5.5 V.<<ETX>>
Self-aligned hot electron InP/InGaAs HBTs with cutoff frequency f/sub T/=110 GHz and f/sub max/=58 GHz have been realized. Preliminary ring oscillators have also been implemented with a propagation delay of 50 ps and 4-mW power consumption per stage. The layer structure was grown lattice-matched to Fe-doped semi-insulating InP substrates by gas-source molecular beam epitaxy. The typical room temperature...
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