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AlInAs/InGaAs heterojunction bipolar transistors exhibiting DC breakdown voltages, V/sub ceo/, in excess of 7 V are reported. The layer structure uses a two-stage collector to achieve the high breakdown voltages. The devices are fabricated with a triply selfaligned dry etch process with high yield. Respective f/sub T/ and f/sub max/ values of 80 and 60 GHz are obtained for emitter dimensions of 2*4...
Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructure bipolar transistors are demonstrated using metalorganic chemical vapour deposition. The transistors have a cutoff frequency of 80 GHz and a common-emitter breakdown voltage of 5.5 V.<<ETX>>
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