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InAs patterned QDs (PQDs) preferentially nucleate on faceted GaAs pyramidal buffers using selective area epitaxy by metalorganic chemical vapor deposition. The photoluminescence (PL) wavelength is shown to be controlled by a single growth parameter, the growth time, without affecting the density of PQDs. Strong room temperature PL emissions over 1.5 mum from PQDs are demonstrated. The long wavelength...
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