The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrate controlled nucleation of QD-cluster and QD-pair on patterned GaAs pyramidal buffer. Photoluminescence measurements indicate lateral energy transfer for the QD-cluster but an isolated nature for the QD-pair.
We report the formation and optical characteristics of GaSb/GaAs type-II quantum dots (QDs) by using an interfacial misfit (IMF) growth mode. A V/III ratio during the growth of GaSb QDs determines the selectivity of IMF and conventional Stranski-Krastanov (SK) growth modes. This transition between SK and optimized IMF QDs is rather abrupt and occurs within a factor-of-2 variations in V/III ratio....
InAs patterned QDs (PQDs) preferentially nucleate on faceted GaAs pyramidal buffers using selective area epitaxy by metalorganic chemical vapor deposition. The photoluminescence (PL) wavelength is shown to be controlled by a single growth parameter, the growth time, without affecting the density of PQDs. Strong room temperature PL emissions over 1.5 mum from PQDs are demonstrated. The long wavelength...
Power-, temperature-dependent, time-resolving, and micro-photoluminescence studies are performed to characterize patterned and self-assembled quantum dots (QDs) to understand the band structure. Carrier filling, relaxation, recombination and lifetime are different for these two QD growth modes.
We demonstrate a monolithic, hybrid GaSb/GaAs diode emitting at 1.6 mum. The LED is comprised of a GaSb active region embedded within GaAs/AlGaAs DBRs using two interfacial misfit arrays. Growth, fabrication and characterization are discussed
We report the device characteristics of stacked InAs/GaAs quantum dots (QDs) with GaP strain compensation (SC) layers grown by metalorganic chemical vapor deposition. By inserting GaP SC layers within the stacked structures, decrease in the density of QDs by stacking QDs can be suppressed and the heterostructure interface between a p-clad and an active layer can be improved due to reduction of overall...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.