The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report the device characteristics of type-II "W" stacked GaSb/GaAs QDs embedded in an InGaAs QW at room temperature (RT). The lasing at RT from 5 stacked GaSb QDs in InGaAs QWs is obtained at a wavelength of 1.026 mum with 2 mm cavity length. A large blueshift of the electroluminescence (EL) peak, which is typical of the type-II geometry, is observed by increasing the injection current...
We demonstrate a monolithic, hybrid GaSb/GaAs diode emitting at 1.6 mum. The LED is comprised of a GaSb active region embedded within GaAs/AlGaAs DBRs using two interfacial misfit arrays. Growth, fabrication and characterization are discussed
The cascadability of an optically latching vertical-cavity surface-emitting laser is investigated through the use of a wavelength-tunable optical probe. The bistable vertical cavity laser emits at a wavelength of 0.98 mu m, and shows a sensitivity peak to probe light generated from a grating-tunable edge-emitting laser in the 0.98 mu m wavelength range. The sensitivity peak occurs in a window of approximately...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.