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Higher speed short-wavelength (850 nm) VCSELs are required for future high-capacity, short-reach data communication links. The modulation bandwidth of such devices is intrinsically limited by the differential gain of the quantum wells (QWs) used in the active region. We present gain calculations using an 8-band k??p Hamiltonian which show that the incorporation of 10% In in an InGaAs/AlGaAs QW structure...
In this work, we explore the use of strained InGaAs/AlGaAs QWs and benchmark the performance against conventional GaAs/AlGaAs QWs.VCSELs with an optimized InGaAs/AlGaAs QW active region have a modulation bandwidth of 20 GHz at 25degC and 15 GHz at 85degC and have enabled error-free transmission over 50 (100) m multimode fiber up to 32 (25) Gb/s at a bias current density as low as 11 kA/cm2 under direct...
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