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A low threshold current density of 640 A/cm/sup 2/ was obtained in a 1.5 Gmm GaInAs/AlGaInAs multiple quantum well laser diode, grown by metal organic chemical vapour deposition, with continuously graded-index separate-confinement heterostructure. An internal waveguide loss of 14 cm/sup -1/ and internal quantum efficiency of 59% were obtained, which are comparable to those of GaInAs/GaInAsP quantum...
A very low threshold current density of 400 A/cm/sup 2/ was obtained in a 1.5 mu m GaInAs/AlGaInAs compressive strained-layer quantum well laser diode, grown by metal organic chemical vapour deposition (MOCVD), with continuously graded-index separate-confinement-heterostructure. A very low threshold current of 3.6 mA was achieved in a high reflective coated 130 mu m long buried heterostructure laser...
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