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Low-frequency noise of HfO2/TiN nMOSFETs with different SiOx interfacial layer (IL) thicknesses is presented. It is observed that chemically formed thin ILs (0.4 nm, 0.45 nm and 0.5 nm) show a noise level close to a reference thermal IL(1 nm). This is shown to relate to the dominant contribution of the high-k HfO2 traps in comparison to the IL traps. The average extracted values for effective trap...
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