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Is order to establish a rigorous test for the various models used to simulate ion implantation in crystalline silicon. we have implanted 17-150 keV boron ions with low doses into ≪111≫ and ≪100≫ silicon in channeling direction. Simulations using the program MARLOWE show that. impact parameter dependent electronic stopping is essential. The binary collision approximation is fully, justified. Moliere...
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