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The impact of technological processes on Germanium-On-Insulator (GeOI) noise performance is studied. We present an experimental investigation of low-frequency noise (LFN) measurements carried out on (GeOI) PMOS transistors with different process splits. The front gate is composed of a SiO 2 /HfO 2 stack with a TiN metal gate electrode. The result is an aggressively reduced equivalent...
This paper presents an experimental analysis of the noise measurements performed in germanium-on-insulator (GeOI) 0.12μm PMOS transistors from weak to strong inversion. The front gate stack is composed of a HfO2 material with a TiN metal gate (equivalent oxide thickness, EOT, of 1.8nm). The buried oxide is used as a back gate for experimental purposes. Front gate and back gate oxides/Ge interfaces...
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