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The increasing demand for high power density requires the power converter to operate in high switching frequency. Silicon carbide (SiC) power module is regarded as one of the most promising candidates for high-frequency applications due to the superior switching speed and low switching loss. With the increase of switching frequency, the switching loss will be the limiting factor of efficiency. Hence,...
The power converter for more electric engine in aircraft requires high power density, which makes SiC extremely attractive for this application. In this work, a 50 kW SiC high power density converter with the topology of three-phase two-level voltage source inverter is developed. Meanwhile, an accurate mathematical model for the power loss and efficiency calculation is proposed, which is based on...
The increasing demand for high power density requires power converter to operate in high switching frequency. SiC power module is regarded as one of the most promising candidates for high-frequency applications due to the superior switching speed and low switching loss. The conventional strategy to optimize switching loss is normally achieved by repetitive double pulse tests, which is time-consuming...
The high switching frequency (> 20 kHz) of SiC MOSFET module makes it as an attractive alternative of Si IGBT module for high power density applications. Since SiC MOSFET and Si IGBT have the similar MOS-gated structure, it is normally regarded that the gate driver of SiC MOSFET can directly inherit from that of Si IGBT. However, considering the different device physics properties, some special...
The reactive power in power converter with inductive load (motor drive e.g.) requires a current commutation path for the freewheeling current. Due to the high voltage drop of body diode of SiC MOSFET, a SiC Schottky diode is normally recommended as the anti-parallel freewheeling diode for SiC MOSFET to suppress the conduction of body diode. However, since the MOSFET can work as synchronous rectifier,...
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