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For power converters with inductive loads, a freewheeling path is needed for the current due to reactive power. The <sc>MOSFET</sc> synchronous rectification (SR) is widely used to reduce the conduction loss during the freewheeling period. Due to the wide band gap of silicon carbide (SiC), the intrinsic body diode of SiC <sc>MOSFET</sc> exhibits a high voltage drop. Hence,...
Power switch devices which base on wide band-gap (WBG) semiconductor, such as silicon carbide metal-oxide-semiconductor-field-effect-transistor (SiC MOSFET) and gallium nitride high-electron-mobility transistor (GaN-HEMT) perform superior performance as compared with silicon (Si) MOSFET in high switching frequency, high blocking voltage, and high temperature operation. In this paper, a series of characteristic...
The power converter for more electric engine in aircraft requires high power density, which makes SiC extremely attractive for this application. In this work, a 50 kW SiC high power density converter with the topology of three-phase two-level voltage source inverter is developed. Meanwhile, an accurate mathematical model for the power loss and efficiency calculation is proposed, which is based on...
The high switching frequency (> 20 kHz) of SiC MOSFET module makes it as an attractive alternative of Si IGBT module for high power density applications. Since SiC MOSFET and Si IGBT have the similar MOS-gated structure, it is normally regarded that the gate driver of SiC MOSFET can directly inherit from that of Si IGBT. However, considering the different device physics properties, some special...
The reactive power in power converter with inductive load (motor drive e.g.) requires a current commutation path for the freewheeling current. Due to the high voltage drop of body diode of SiC MOSFET, a SiC Schottky diode is normally recommended as the anti-parallel freewheeling diode for SiC MOSFET to suppress the conduction of body diode. However, since the MOSFET can work as synchronous rectifier,...
To drive SiC power module with high-speed switching, the stray inductance becomes a key factor in converter design. In this work, the stray inductances of module and peripheral circuits are investigated by simulation and measurement. With the loop stray inductance of 29.2 nH, the module is tested up to 800 V and 50 A with insignificant EMI issues of ringing and overshoot. And the dv/dt ratios at turn-off...
As SiC MOSFET is moving towards high current rating through parallel devices in a module, the ability to switch it fast with minimum switching loss becomes a new challenge. Amid this new challenge, power converter designers need to deal with more demanding measurement method to obtain correct switching waveforms. Switching waveforms are an important asset for converter designers because they can reveal...
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