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Al2O3 film with SiNx capping layer is widely used for rear side passivation of p-type PERC cells and passivation of p+ emitter in n-PERT cells because of very effective field-induced passivation by high density of negative charge in Al2O3 (5e12∼1e13cm−2). This paper reports on a promising field-effect passivation by charge injection in SiO2/SiNx stack using a novel low-cost plasma charging method...
In this paper, the role of Al content in Ag/Al paste used for making screen printed contacts to B emitter is investigated. Five different Ag/Al pastes with varying Al content below <5% Al were formulated. It is found that contact resistance decreased monotonically with the increase in Al content. In addition, a slight decrease in effective sheet resistance of boron emitter was observed for higher...
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