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Herein, a simple approach through vapor transport and condensation process for the synthesis of various large-scale AlN nanostructures has been demonstrated using AICI3 powder and NH3 as starting materials. Their structural and field emission (FE) properties were characterized. The nanostructure dependences of FE properties and the possible mechanism involved have been investigated and discussed.
Mobility enhancement unique to AlGaN/GaN MOSHFETs was characterized under CW and pulse conditions and at different temperatures. The physical insight obtained was used to guide the modification of the Angelov model to account for threshold shift with temperature and capacitance peaking near pinch off. This modified Angelov model can accurately simulate the power, gain, efficiency, drain current, and...
A temperature-dependent RF large-signal model is constructed by modifying the Verilog-A code of the Angelov model for unique characteristics of GaN MOSHFETs. Different from the previously reported EEHEMT-based model, the present electro-thermal model can fit the temperature effects on threshold shift and transconductance degradation, the drain current in the linear region, and the gate capacitance...
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