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We have studied growth of self-assembled CdTe quantum dots (QDs) grown on various thicknesses of ZnTe buffer layer by using molecular beam epitaxy (MBE) and atomic layer epitaxy (ALE). The excitonic peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E 1 −HH 1 ) in the CdTe/ZnTe QDs shifted to a lower energy with increasing...
Atomic force microscopy (AFM) measurements were carried out to investigate the formation of CdTe quantum dots (QDs) grown on GaAs substrates by using molecular beam epitaxy. The AFM images showed that uniform CdTe QDs were formed on GaAs substrates due to the large lattice mismatch between the CdTe QDs and the GaAs substrate. The size and the density of the CdTe QDs were varied by changing the thickness...
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