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Leakage power is one of the most critical issues for ultradeep submicrometer technology. Subthreshold leakage depends nearly exponentially on linewidth, and consequently, variation in linewidth translates to a large leakage variation. A significant fraction of variation in the linewidth occurs due to systematic variations involving focus and pitch. In this paper, we propose a new leakage-estimation...
We present a novel detailed placement technique that accounts for systematic through-pitch variations to reduce leakage. Leakage depends nearly exponentially on linewidth (gate length), and even small variations in linewidth introduce large variability in leakage. A substantial fraction of linewidth variation is systematic with respect to the device layout context. Detailed placement changes context...
Process variations due to lens aberrations are to a large extent systematic, and can be modeled for purposes of analyses and optimizations in the design phase. Traditionally, variations induced by lens aberrations have been considered random due to their small extent. However, as process margins reduce, and as improvements in reticle enhancement techniques control variations due to other sources with...
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