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On-resistance of AlGaN/GaN HEMTs with MIS and MES gate structures has been investigated. In the case of the MES gate structure, the HEMT with specific on-resistance lower than 0.1 mOmegacm2 was obtained by shortening the drain-source length to 2.2 mum. The maximum transconductance gm,max and the off-state breakdown voltage were 220 mS/mm and 35 V, respectively. Tradeoff characteristic of the specific...
Effects of the collector carrier concentration N/sub c/ of AlGaAs/GaAs self-aligned HBT's with a buried collector on high frequency performances are studied experimentally. f/sub T/ increases monotonically with N/sub c/, while f/sub max/ has a maximum point for the intermediate doping of N/sub c/=5*10/sup 16/ cm/sup -3/.<<ETX>>
An AlGaAs/GaAs HBT has been fabricated by introducing an n/sup +/-GaInAs cap layer to reduce the emitter contact resistivity and optimising a multiple self-alignment process using one mask. The HBT has a good high-frequency performance of f/sub T/=82 GHz and f/sub max/=120 GHz.<<ETX>>
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