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On-resistance of AlGaN/GaN HEMTs with MIS and MES gate structures has been investigated. In the case of the MES gate structure, the HEMT with specific on-resistance lower than 0.1 mOmegacm2 was obtained by shortening the drain-source length to 2.2 mum. The maximum transconductance gm,max and the off-state breakdown voltage were 220 mS/mm and 35 V, respectively. Tradeoff characteristic of the specific...
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