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Ti/GaN interface formation on GaN(0001)-(1×1) surface has been investigated by means of resonant photoelectron spectroscopy (for photon energies near to Ti 3p→3d excitation). The sets of photoelectron energy distribution curves were recorded for in situ prepared clean GaN surface and as a function of Ti coverage followed by post-deposition annealing. Manifestations of chemical reactions at the Ti/GaN...
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