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Single-crystal metastable (GaAs)1?xGex alloys with 0?x?1 have been grown on (100) GaAs substrates using ultra-high-vacuum ion-beam sputter deposition. Optical absorption measurements showed that the direct gap E0 exhibited a large negative, but nonparabolic, bowing as a function of x with a broad minimum E0?0.5 eV near 35 mole % Ge. Raman results exhibited a nonlinear `single-mode? behaviour, with...
Single period modulation-doped structures composed of an AlxGa1?xAs layer, part of which is doped with Si, on top of an undoped GaAs layer have been grown by molecular beam epitaxy. The films were characterised using Hall effect measurements carried out at temperatures between 10 and 300 K. With 50?75 ? thick undoped (Al, Ga)As layers near the interface, mobilities in excess of 115000 cm2/Vs at 10...
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