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We have investigated heat-treated 4H- and 6H-SiC(0001)Si surfaces using AES, LEED, EELS and STM in ultra high vacuum (UHV). √3 √3 and 6 6 reconstructions were observed in the STM study at ∼ 1000 and ∼ 1200°C, respectively. On the other hand, 6√3 6√3 superstructure was observed by LEED at ∼ 1200°C. The AES p-p height ratio of Si (LVV)/C (KLL) decreased at higher temperatures. EELS proved the...
We have investigated 4H- and 6H-SiC(0001)Si faces prepared by heat treatment using Auger electron spectroscopy (AES), low energy electron diffraction (LEED) and scanning tunneling microscopy (STM) in ultra high vacuum (UHV). The following were elucidated: √3 √3 reconstruction was observed on the surface prepared at ∼1000°C, while 6 6 superstructure was observed for a specimen prepared at ∼1200°C...
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