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By combining electrical, physical, and transport/atomistic modeling results, this study identifies critical conductive filament features controlling TiN/HfO2/TiN resistive memory operations. The forming process is found to define the filament geometry, which in turn determines the temperature profile and, consequently, the switching characteristics. The findings point to the critical importance of...
Unprecedented ultrahigh-reflectance (R > 0.9995) in a one-dimensional photonic crystal (1D PC) mirror was experimentally demonstrated by using a terahertz time-domain spectroscopy (THz-TDS). The PC mirror was composed of three air gaps and four high-resistivity float zone (FZ) silicon layers, prepared by a high precision chemical mechanical polishing (CMP) machine. The power reflectance of 1D PC...
We demonstrate for the first time molybdenum based oxygen-bearing electrodes for improved performance in MANOS (Metal-Alumina-Nitride-Oxide) charge-trap NVM, and also MIM-DRAM type devices. The meta-stable high work- function (Wfn) molybdenum-oxynitride (MoON) electrodes result in improved retention and erase saturation for the charge trap NVM devices and improved leakage for the MIM devices. Although...
We demonstrate for the first time improved program, erase, and endurance for charge trap flash TaN-Al2O3-Si3N4-ldquoTunnel-oxide (TO)rdquo-Si MOSFETs through band engineered tunnel oxides (BETO). Several high-K dielectrics (HfO2, HfSiO, Al2O3, Si3N4) and tunnel stack sequences (SiO2-high-k, SiO2-high-k-SiO2) are compared. New results are as follows: SiO2/Al2O3 (OA) BE-TO and SiO2/Si3N4/SiO2 (ONO)...
Gate first 0.59 nm EOT HfOx/metal gate stacks for 16 nm node application are demonstrated for the first time. By controlling O during HfOx deposition, ldquozerordquo low-k SiOx interface (ZIL) forms despite a 1020degC activation anneal. This 0.59 nm EOT is a 30% improvement over a state of the art 32 nm HK/MG technology. We compare and demonstrate for the first time the improved scalability of ZIL...
We apply a systematic approach to identify a high-k/metal gate stack degradation mechanism. Our results demonstrate that the SiO2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.
We propose a self-consistent calculation method for apertureless THz near-field microscope (NFM) which is based on an exact image theory. Within the quasi-electrostatic limit, the exact image theory was iteratively applied to calculate interactions between dielectric spheres and substrate effects. The calculated near field was in excellent agreement with results from a commercial finite element method...
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