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This paper investigates the electrical properties of metal-insulator-semiconductor (MIS) by varying the thickness of the semiconductor layer. The MIS device was fabricated using ZnO and PMMA: TiO2 nanocomposite as semiconductor and dielectric layer, respectively. Different thickness of ZnO films was obtained by varying the deposition speed from 500 to 3000 rpm. The electrical properties of MIS showed...
PMMA/TiO2 nanocomposite films in free standing form were prepared at different amount of TiO2 nanoparticles by using sonication method. The PMMA powder and TiO2 nanopowder were dissolved into the toluene solution and sonicated for 1 h to confirm the homogeneity of the mixture. The FESEM micrographs reveal that PMMA/TiO2 nanocomposite contain 4 wt% TiO2 nanoparticles can produced the homogenous mixture...
The electrical, dielectric and structural properties of multilayer ZnO/MgO films prepared by simple chemical deposition technique were investigated using I-V measurement, impedance spectroscopy analyzer and field emission scanning electron microscope (FESEM). From the observation, it shows that the annealing temperature influence the electrical, dielectric and structural properties of ZnO/MgO multilayer...
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