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This work focuses on the performance of a MWIR hole dominated APD. The superlattice (InAs/GaAs/GaInSb/AlSb/GaAs) was specifically designed to have hole dominated avalanching.
High energy light ion (HELI) irradiation has been used for modification and engineering of defects in semiconductors. Different structural and electrical characterizations have been employed to monitor the effect of irradiation. We have shown that the energy lost by HELI in GaAs and InP is not sufficient to introduce bulk defects in GaAs. In contrast, defect creation and annihilation scales with the...
Group-III nitride semiconductors, which have stable wurtzite crystal structure, are today amongst the most important materials for opto-electronic device applications. Currently all commercially available nitride light emitting devices are made with C-plane oriented films, where growth is along the c-axis . However large piezo-electric and pyro-electric effects in these materials lead to high interfacial...
The authors report room temperature reflectance measurements on wurtzite C-plane GaN films grown on sapphire substrates. The spectra clearly show exciton related features near the fundamental bandgap of GaN. The Lorentz oscillator model was used to analyze the excitonic contribution to the spectral lineshape and to determine the transition energies. The results are explained by comparison with electronic...
InAs-GaSb strain layer superlattice p+-n--n avalanche photodiodes (APDs) are fabricated using a newly introduced electron-beam aided zinc sulfide deposition. Temperature-dependent measurements were performed on 300 times 300 mum2 mesa etched APDs. The effect of passivation was also studied on the diode characteristics and APD performances. Temperature-dependent gain strongly correlates with avalanche...
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