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The Sb adsorption process on the Si(111)-In(4x1) surface phase was studied in the temperature range 200-400 o C. The formation of a Si(111)-InSb (2x2) structure was observed between 0.5 and 0.7ML of Sb. This reconstruction decomposes when the Sb coverage approaches 1ML and Sb atoms rearrange to (3x3) and (2x1) reconstructions; released In atoms agglomerate into islands of irregular shapes...
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