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The high-κ gate dielectrics, specifically amorphous films offer salient features such as exceptional mechanical flexibility, smooth surfaces and better uniformity associated with low leakage current density. In this work, ∼35nm thick amorphous ZrO2 films were deposited on silicon substrate at low temperature (300°C, 1h) from facile spin-coating method and characterized by various analytical techniques...
Titanium dioxide (TiO 2 ) films have been deposited on glass and p-silicon (100) substrates by DC magnetron sputtering technique to investigate their structural, electrical and optical properties. The surface composition of the TiO 2 films has been analyzed by X-ray photoelectron spectroscopy. The TiO 2 films formed on unbiased substrates were amorphous. Application of negative...
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