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Chemical beam epitaxy (CBE) growth of very high purity InP with Hall mobility as high as 238000 cm/sup 2//V s at 77 K and with a peak value of 311000 cm/sup 2//V s at 50 K and residual impurity concentration of 6*10/sup 13/ cm/sup -3/ at 77 K is reported for an InP layer grown at 500 degrees C. These values are the highest mobility values are reported for InP grown by any molecular beam method.<<ETX>>
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