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Intensive investigation on WO3-x nanostructures has been carried out in the last decade because they possess extraordinary properties. Especially for application in field emission, W18O49 nanostructures have exhibited excellent performance. Some issues have to be addressed in fabricating vacuum microelectronic devices using W18O49 nanostructures, including how to realize well aligned nanostructure...
Tungsten oxide nanostructures have been paid much attention because of their particular physics and chemical properties. But until now, it is difficult to realize patterned growth of tungsten oxide nanowire arrays. In this paper, we demonstrate that tungsten oxide nanowire arrays can be controllably synthesized in patterned arrays at low temperature of 550°C by a simple ceramic template method. The...
We report the random telegraph noise observed in gate-all-around (GAA) PMOS silicon nanowire FETs (SNWFETs) with the radius of 5 nm, at various temperatures (s) down to 4.2 K. From the -dependence of the capture/emission time, we obtain the energy and the charging status of the trap states. The gate bias dependence and the -dependence of the scattering coefficient-mobility product extracted from the...
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