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A large area colour imager optically addressed is presented. The colour imager consists of a thin wide band gap p-i-n a-SiC:H filtering element deposited on the top of a thick large area a-SiC:H(-p)/a-Si:H(-i)/SiC:H(-n) image sensor, which reveals an intrinsic colour filter. In order to tune the external applied voltage for full colour discrimination, the photocurrent generated by a modulated red...
A visible/near-infrared optical sensor based on an ITO/SiO x /n-Si structure with internal gain is presented. This surface-barrier structure was fabricated by a low-temperature processing technique. The interface properties and carrier transport were investigated from dark current-voltage and capacitance-voltage characteristics. Examination of the multiplication properties was performed under...
We have modelled a p-i-n image sensor under local illumination through a two-dimensional non-linear circuit. The sensor is described as an array of photodiodes interconnected through lateral resistors, which model the sheet resistance of the doped layers. Under small-signal analysis, each photodiode is modelled by a current-controlled resistor proportional to the inverse of the photocurrent. A SPICE...
Amorphous glass/ZnO:Al/p(a-Si:H)/i(a-Si:H)/n(a-Si 1-x C x :H)/Al imagers with different n-layer resistivities were produced by plasma enhanced chemical vapour deposition technique (PE-CVD). The image is projected onto the active surface of the sensor and defines itself spatially confined depletion regions that can be readout by scanning the photodiode with a low power modulated...
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