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We report record RF performance in 40nm-gate GaN-HEMT technology. Through vertical scaling in an AlN/GaN/AlGaN double heterojunction (DH) HEMT structure and reduction of access resistance using MBE re-growth of n+-GaN ohmic contacts, fully-passivated 40-nm devices exhibited excellent DC characteristics, such as an Ron of 0.81Ω·mm, an Idmax of 1.61A/mm, a BVoff of 42V, and a peak extrinsic gm of 723mS/mm,...
In this paper, we report on vertically scaled GaN/AIN DH-HEMTs with regrown n+GaN ohmic contacts by MBE. Our conventional AlGaN barrier was replaced with an AlN barrier, greatly reducing the barrier thickness while maintaining a high carrier density. A selective-area MBE regrowth of an n+GaN ohmic contact layer significantly reduced access resistance. The 60 nm device exhibited a low Ron of 0.81Ω·mm...
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