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We have used a lift-off technique and X-ray photoelectron spectroscopy to probe initially buried interfaces of a CdTe solar cell after CdCl2 and contact treatments. We find that the cleavage takes place at or near the CdTe/CdS interface. On both surfaces, Cl is present, most likely due to diffusion through the CdTe layer during the high-temperature CdCl2 activation step. Te is present on both cleavage-exposed...
High-efficiency Cu(In1-xGax)Se2 (CIGSe)-based solar cells utilize a CdS buffer layer between the window and the chalcopyrite absorber. Soft x-ray spectroscopies were employed to investigate the chemical properties of the CdS/CIGSe interface and its dependence on the details of the chemical bath deposition (CBD) of CdS. We have investigated the CdS/CIGSe interface after various CdS CBD times (0, 4,...
Wide-gap chalcopyrite CuInS2 ("CIS")-based thin film solar cells are far behind their low-gap counterparts in terms of photovoltaic performance. To date, most chalcopyrite-based devices include a CdS layer, which is deposited in a chemical bath (CBD). In order to shed light on the effects induced by the interface formation, the buried CdS/CIS interface was investigated by X-ray emission...
The band alignment at the CdS/Cu(In,Ga)(S,Se)2 interface, as derived in our earlier publications, are compared for different absorber compositions. The discussed band alignments were directly determined using a combination of UV- and X-ray photoemission and inverse photoemission. While a flat conduction band alignment can be found for low-gap material, the cell structure with a high-gap absorber shows...
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