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In this article, the effect of proton irradiation on the DC characteristic of InP/InGaAs heterojunction is studied with varying fluences and proton energies. The current-voltage (I–V) before and after proton irradiation are compared. The result indicates that higher device current is caused by lower energy proton irradiation and the increase of fluences for the proton energy less than 3MeV. The density...
A W-band two-stage amplifier MMIC has been developed using a InP-based high electron mobility transistor (HEMT) technology. The two-stage amplifier has been realized in combination with coplanar waveguide topology and cascode transistors, thus leading to a compact chip-size of 1.85 mm×0.932 mm and an excellent small-signal gain of 25.7 dB at 106 GHz. The successful design of the two-stage amplifier...
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