The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report the characteristics of HfO2/Al2O3 gate dielectric nanometer-stacks deposited on InAlAs at 245 °C by atomic layer deposition. The annealing effect on the interface and electrical properties of stack films was investigated by X-ray photoelectron spectroscopy, and electrical measurements. It is demonstrated that the resultant of As2O3 during annealing is suppressed by Al2O3 layer. The annealed...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.