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We report the characteristics of HfO2/Al2O3 gate dielectric nanometer-stacks deposited on InAlAs at 245 °C by atomic layer deposition. The annealing effect on the interface and electrical properties of stack films was investigated by X-ray photoelectron spectroscopy, and electrical measurements. It is demonstrated that the resultant of As2O3 during annealing is suppressed by Al2O3 layer. The annealed...
The growth and crystallization processes of Co20Fe50B30/MgO/Co20Fe50B30 magnetic tunnel junction structures are investigated with 2θ x-ray diffraction. By increasing thickness and proper annealing, the crystal structure of MgO has been improved. The results show important information for preparation of magnetic tunnel junction.
An array of TLM(transfer length method) test patterns is formed on N-wells created by P+ ion implantation into Si-faced p-type 4H-SiC epilayer. The Ge+ ion implantations are used to form the intermediate semiconductor layer (ISL) of nickel-metal ohmic contacts to n-type 4H-SiC. The specific contact resistance pc as low as 4.23 times 10-5 Omegacm2 is achieved after annealing in N2 at 800 degC for 3...
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