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In this paper, the authors propose a novel Ni/Co/Ni/TiN structure to improve the thermal stability of Ni silicide on doped substrate. Two-step RTP is also utilized to increase the thermal stability.
In this paper, a study of Ni suicide formed on SOI substrate that has different Si thickness (Tsi = 27, 50 nm) is performed in depth. The dependence of Ni silicide on the thickness of Ni/Co is also characterized. Ni silicide on SOI film exhibits quite different characteristics compared to that on bulk silicon. That is, Ni silicide on SOI showed 'V' shape as a function of deposited Ni/Co thickness...
In this paper, thermally stable nickel silicide (NiSi) technologies are investigated for nano-scale CMOS technology. Co/TiN double capping layer is investigated first. Co/TiN double capping is highly efficient in retarding Ni diffusion during high temperature post silicidation annealing by forming CoNiSi ternary layer at the top region of silicide. Then, hydrogen plasma implantation before Ni/Co/TiN...
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