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Thermal annealing and electromigration (EM) tests were performed with Cu pillar/Sn bumps to understand the growth mechanism of intermetallic compounds (IMCs). Annealing tests were carried out at both 100°C and 150°C. At 150°C, EM tests were performed using a current density of 3.5 × 104 A/cm2. The electrical failure mechanism of the Cu pillar/Sn bumps was also investigated. Cu3Sn formed and grew at...
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