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The metal organic vapor phase epitaxy (MOVPE) growth of indium gallium nitride (InGaN) has been discussed in detail towards the fabrication of solar cell. The InGaN film with In contents up to 0.4 are successfully grown by controlling the fundamental growth parameters such as the precursor gas flow rates, temperature etc. The formation of metallic In originates from the higher value (0.74) of trimethylindium/(trimethylindium + triethylgallium)...
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