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Doped p–n junctions are fundamental electrical components in modern electronics and optoelectronics. Due to the development of device miniaturization, the emergence of two‐dimensional (2D) materials may initiate the next technological leap toward the post‐Moore era owing to their unique structures and physical properties. The purpose of fabricating 2D p–n junctions has fueled many carrier‐type modulation...
Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light‐emitting devices, and photodiodes. In this work, high‐performance photovoltaic photodetectors based on MoTe2/MoS2 vertical heterojunctions are demonstrated by exfoliating‐restacking approach. The fundamental electric properties...
In article number 1703293, Tie Lin, Weida Hu, Jianlu Wang, and co‐workers present a high performance photovoltaic photodetector based on MoTe2/MoS2 Van der Waals heterojunction. The light‐induced charge transport under different biases is discussed. As self‐powered photodetectors, the vertical 2D p‐n junctions achieve a sensitive response and broad detection wavelength range. These properties indicate...
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