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Reduction of SnO2 to form spherical Sn particles and Sn etching are obtained by floating wire (FW)‐assisted medium‐pressure H2/Ar plasma. High‐density H2/Ar plasma (1014 cm−3) with a larger treatment area at medium pressure (10 kPa) produces a two‐times higher removal rate of SnO2 (0.111 mg/min) than that at atmospheric pressure with the same treatment area of 300 mm2. SnO2 film is removed from the...
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